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YIJIN ELECTRONIC> Semiconductors > Discrete Semiconductor Products > Transistors - IGBTs - Modules > >>

FD16001200R17KF6CB2NOSA1 Original stock-wholesale price

FD16001200R17KF6CB2NOSA1

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FD16001200R17KF6CB2NOSA1

Manufacturer Model: FD16001200R17KF6CB2NOSA1
Manufacturer: Infineon Technologies
Package/Specification
Product Description:
IGBT MODULE
Place of delivery: Lead time(weekday):2 hour shipping
Stock:

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  • Product Classification

    Transistors - IGBTs - Modules

    Mfr

    Infineon Technologies

    Series

    -

    Package

    Bulk

    Product Status

    Active

    IGBT Type

    -

    Configuration

    Single Switch

    Voltage - Collector Emitter Breakdown (Max)

    1700 V

    Current - Collector (Ic) (Max)

    2.6 kA

    Vce(on) (Max) @ Vge, Ic

    3.1V @ 15V, 1.6kA

    Current - Collector Cutoff (Max)

    5 mA

    Input

    105 nF @ 25 V

    Input

    Standard

    Technical Documentation
    Data Book FD16001200R17KF6CB2NOSA1.pdf

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